1SS357_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS357
Low Voltage High Speed Switching
z Low forward voltage
z Low reverse current
z Small package
: V_{F (3)} = 0.54V (typ.)
: I_R = 5μA (max)
: SC-70
1SS357
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
45
V
Reverse voltage
V_R
40
V
Maximum (peak) forward current
I_FM
300
mA
Average forward current
I_O
100
mA
Surge current (10ms)
I_FSM
1
A
Power dissipation
P
200*
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
JEITA
TOSHIBA
―
―
1-1E1A
reliability significantly even if the operating conditions (i.e. operating _{Weight: 0.004g (typ.)}
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Mounted on a glass epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
C_T
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 40V
― V_R = 0, f = 1MH_z
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.54 0.60
―
―
5
μA
―
18
25
pF
Pin Assignment (Top View)
Marking
Start of commercial production
1990-01
1
2014-03-01