1SS349_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Ultra High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Schottky Planar Type
1SS349
Ultra High Speed Switching Application
z Low forward voltage
z Low reverse current
z Small package
: V_{F (3)} = 0.49V (typ.)
: I_R = 50μA (max)
: SC−59
1SS349
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Power dissipation
V_RM
V_R
I_FM
I_O
P
25
V
20
V
3000
mA
1000
mA
200
mW
Junction temperature
T_j
125
°C
Storage temperature
Operating Temperature
T_stg
−55∼125
°C
JEDEC
T_opr
−40∼100
°C
EIAJ
TD−236MOD
SC−59
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1−3G1B
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.012g
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
C_T
Test
Circuit
Test Condition
― IF = 100mA
― IF = 500mA
― IF = 1000mA
― VR = 20V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.34 ―
― 0.42 ―
V
― 0.49 0.55
―
―
50
μA
― 250 ―
pF
Marking
1
2007-11-01