1SS348_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Low Voltage High Speed Switching

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS348
Low Voltage High Speed Switching
1SS348
Unit: mm
z Low forward voltage
z Low reverse current
z Small package
: V_{F (3)} = 0.56V (typ.)
: I_R = 5μA (max)
: SC-59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Power dissipation
V_RM
V_R
I_FM
I_O
P
85
V
80
V
300
mA
100
mA
200
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg
−55~125
°C
Operating Temperature
T_opr
−40~100
°C
JEDEC
TD-236MOD
Note: Using continuously under heavy loads (e.g. the application of high ^EIAJ
SC-59
temperature/current/voltage and the significant change in
TOSHIBA
1-3G1B
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.012g
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
C_T
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 80V
― V_R = 0, f = 1MHz
Min Typ. Max Unit
― 0.26 ―
― 0.34 ―
V
― 0.56 0.70
―
―
5
μA
―
45 100 pF
Marking
1
2007-11-01