1SS344_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Ultra High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Schottky Planar Type
1SS344
Ultra High Speed Switching Application
1SS344
Unit: mm
z Low forward voltage
: V_{F (3)} = 0.50V (typ.)
z Fast reverse recovery time : t_rr = 20ns (typ.)
z High average forward current : I_O = 0.5A (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
25
V
Reverse voltage
V_R
20
V
Maximum (peak) forward current
I_FM
1500
mA
Average forward current
I_O
500
mA
Surge current (10ms)
I_FSM
5
A
Power dissipation
P
200
mW
Junction temperature
T_j
125
°C
Storage temperature
Operating Temperature
T_stg
−55~125
°C
JEDEC
T_opr
−40~100
°C
EIAJ
TD-236MOD
SC-59
Note: Using continuously under heavy loads (e.g. the application of high ^TOSHIBA
1-3G1B
temperature/current/voltage and the significant change in
Weight: 0.012g
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 10mA
― I_F = 100mA
― I_F = 500mA
― V_R = 10V
― V_R = 20V
― V_R = 0, f = 1MHz
― I_F = 50mA, (Fig.1)
Min Typ. Max Unit
― 0.30 ―
― 0.38 ―
V
― 0.50 0.55
―
―
20
μA
―
― 100
― 120 ―
pF
―
20
―
ns
1
2007-11-01