1SS322_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Low Voltage High Speed Switching

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS322
Low Voltage High Speed Switching
z Low forward voltage
z Low reverse current
z Small package
: V_{F (3)} = 0.54V (typ.)
: I_R = 5μA (max)
: SC−70
1SS322
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
V_RM
V_R
I_FM
I_O
45
V
40
V
300
mA
100
mA
Power dissipation
P
100
mW
Junction temperature
T_j
125
°C
JEDEC
―
Storage temperature
T_stg
−55∼125
°C
EIAJ
SC−70
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
1−2P1D
temperature/current/voltage and the significant change in
Weight: 0.006g
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 40V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.54 0.60
―
―
5
μA
―
18
25
pF
Marking
1
2007-11-01