1SS321_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS321
Low Voltage High Speed Switching
1SS321
Unit: mm
z Low forward voltage
z Low reverse current
z Small package
: V_F = 0.42V (typ.)
: I_R = 500nA (max)
: SC-59 (SOT-23MOD)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
12
V
Reverse voltage
V_R
10
V
Maximum (peak) forward current
I_FM
150 (*)
mA
Average forward current
I_O
50 (*)
mA
Surge current (10ms)
I_FSM
1000 (*)
mA
Power dissipation
P
150
mW
Junction temperature
T_j
125
°C
JEDEC
SOT−23MOD
Storage temperature
T_stg
−55∼125
°C
EIAJ
SC−59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
Weight: 0.012g
1−3G1F
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Unit rating. Total rating = unit rating × 1.5.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 50mA
― VR = 10V
― VR = 0, f = 1MHz
Marking
Min Typ. Max Unit
― 0.32 ―
― 0.42 ―
V
― 0.63 1.00
―
―
500
nA
―
3.2
4.5
pF
1
2007-11-01