1SS321TE85LF Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Low-Voltage High-Speed Switching

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS321
Low-Voltage High-Speed Switching
1SS321
Unit: mm
z Low forward voltage: V_F = 0.42 V (typ.)
z Low reverse current: I_R = 500 nA (max)
z Small package: SC-59
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
12
V
Reverse voltage
V_R
10
V
Maximum (peak) forward current
I_FM
150*
mA
Average forward current
I_O
50*
mA
Surge current (10 ms)
I_FSM
1000*
mA
Power dissipation
P
150
mW
Junction temperature
T_j
125
°C
JEDEC
TO−236MOD
Storage temperature
T_stg
−55 to 125
°C
JEITA
SC−59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
1−3G1F
Weight: 0.012 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5.
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― IF = 1 mA
― IF = 10 mA
― IF = 50 mA
― VR = 10 V
― VR = 0, f = 1 MHz
Marking
Min Typ. Max Unit
― 0.32 ―
― 0.42 ―
V
― 0.63 1.00
―
―
500
nA
―
3.2 4.5
pF
1
2008-11-11