1SS311_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Voltage,High Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS311
1SS311
High Voltage,High Speed Switching Applications
z Low forward voltage
: V_F = 0.94V (typ.)
z High voltage
: V_R = 400V (min)
z Fast reverse recovery time : t_rr = 1.5ns (typ.)
z Small total capacitance : C_T = 3.2pF (typ.)
z Small package
: SC−59
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
420
V
Reverse voltage
V_R
400
V
Maximum (peak) forward current
I_FM
300
mA
Average forward current
Surge current (10ms)
Power dissipation
I_O
I_FSM
P
100
mA
2
A
150
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg
−55∼125
°C
JEDEC
EIAJ
―
SC−61
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
Weight: 0.012g
1−3G1B
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
I_{R (1)}
I_{R (2)}
C_T
Test
Circuit
Test Condition
― IF = 10mA
― IF = 100mA
― VR = 300V
― VR = 400V
― VR = 0, f = 1MHz
Reverse recovery time
t_rr
― IF = 10mA
Min Typ. Max Unit
― 0.80 ―
V
― 0.94 1.20
―
―
0.1
μA
―
―
1.0
―
3.2
5.0
pF
―
1.5
―
μs
Marking
1
2007-11-01