1SS308_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Ultra High Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS308
1SS308
Ultra High Speed Switching Applications
Unit: mm
z Small package
: SC-74A
z Low forward voltage
: V_{F (3)} = 0.92V (typ.)
z Fast reverse recovery time : t_rr = 1.6ns (typ.)
z Small total capacitance : C_T = 2.2pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
V_RM
V_R
I_FM
I_O
I_FSM
P
T_j
T_stg
85
V
80
V
300 (*)
mA
100 (*)
mA
2 (*)
A
200
mW
125
°C
−55∼125
°C
Note: Using continuously under heavy loads (e.g. the application of high ^JEDEC
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
EIAJ
TOSHIBA
SC−3H1A
1−3H1A
temperature/current/voltage, etc.) are within the absolute maximum Weight: 0.014g
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 30V
― VR = 80V
― VR = 0, f = 1MHz
Reverse recovery time
t_rr
― IF = 10mA, Fig.1
Min Typ. Max Unit
― 0.61 ―
― 0.74 ―
V
― 0.92 1.20
―
―
0.1
μA
―
―
0.5
―
2.2
4.0
pF
―
1.6
4.0
ns
Marking
1
2007-11-01