1SS307_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS307
General Puropose Rectifier Applications
1SS307
Unit: mm
z Low forward voltage
z Low reverse current
z Small total capacitance
z Small package
: V_F = 1.0V (typ.)
: I_R = 0.1nA (typ.)
: C_T = 3.0pF (typ.)
: SC−59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
35
V
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
V_R
I_FM
I_O
I_FSM
P
30
V
300
mA
100
mA
1
A
150
mW
Junction temperature
T_j
125
°C
JEDEC
TO−236MOD
Storage temperature
T_stg
−55 to 125
°C
JEITA
SC−59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1−3G1B
Weight: 12 mg (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_F
I_R
C_T
Test
Circuit
Test Condition
― IF = 100mA
― VR = 30V
― VR = 0, f = 1MHz
Min Typ. Max Unit
―
1.0 1.3
V
―
―
10
nA
―
3.0
6.0
pF
Marking
Start of commercial production
1988-05
1
2014-03-01