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1SS307E Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Diodes Silicon Epitaxial Planar
Switching Diodes Silicon Epitaxial Planar
1SS307E
1. Applications
• General-Purpose Rectifiers
2. Features
(1) Very low reverse current. : IR = 10 nA (max)
(2) AEC-Q101 qualified (Note 1)
Note 1: For detail information, please contact to our sales.
3. Packaging and Internal Circuit
ESC
1SS307E
1: Cathode
2: Anode
Start of commercial production
2015-04
1
2015-06-11
Rev.3.0