1SS306_15 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS306
High Voltage, High Speed Switching Applications
1SS306
Unit: mm
 Small package
: SC-61
 Low forward voltage
: VF (2) = 0.90 V (typ.)
 Fast reverse recovery time : trr = 30 ns (typ.)
 Small total capacitance : CT = 1.5 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
VRM
VR
IFM
IO
IFSM
P
250
V
200
V
300 (*)
mA
100 (*)
mA
2 (*)
A
150
mW
Junction temperature
Storage temperature
Tj
125
°C
JEDEC
Tstg
−55 to 125
°C
JEITA
―
SC-61
Note: Using continuously under heavy loads (e.g. the application of high ^TOSHIBA
2-3J1A
temperature/current/voltage and the significant change in
Weight: 0.013 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
IR (1)
IR (2)
CT
trr
Test Condition
IF = 10 mA
IF = 100 mA
VR = 50 V
VR = 200 V
VR = 0 V, f = 1 MHz
IF = 10mA, Fig.1
Min Typ. Max Unit
― 0.72 1.0
V
―
0.9
1.2
―
―
0.1
μA
―
―
1.0
―
1.5
3.0
pF
―
30
60
ns
Start of commercial production
1986-10
1
2015-06-08