1SS306_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Voltage, High Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS306
High Voltage, High Speed Switching Applications
1SS306
Unit: mm
z Low forward voltage
: V_{F (2)} = 0.90V (typ.)
z Fast reverse recovery time : t_rr = 30ns (max)
z Small total capacitance : C_T = 1.5pF (typ.)
z Small package
: SC-61
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
250
V
Reverse voltage
V_R
200
V
Maximum (peak) forward current
I_FM
300 (*)
mA
Average forward current
I_O
100 (*)
mA
Surge current (10ms)
Power dissipation
I_FSM
P
2 (*)
A
150
mW
Junction temperature
Storage temperature
T_j
125
°C
JEDEC
T_stg
−55~125
°C
EIAJ
―
SC-61
Note: Using continuously under heavy loads (e.g. the application of high ^TOSHIBA
2-3J1A
temperature/current/voltage and the significant change in
Weight: 0.013g
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 10mA
― I_F = 100mA
― V_R = 50V
― V_R = 200V
― V_R = 0, f = 1MHz
― I_F = 10mA
Fig.1
Min Typ. Max Unit
― 0.72 1.0
V
―
0.9 1.2
―
―
0.1
μA
―
―
1.0
―
1.5 3.0
pF
―
30
60
ns
1
2007-11-01