1SS302_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Ultra High Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS302
Ultra High Speed Switching Applications
z Small package
: SC-70
z Low forward voltage
: V_{F (3)} = 0.90V (typ.)
z Fast reverse recovery time : t_rr = 1.6ns (typ.)
z Small total capacitance : C_T = 0.9pF (typ.)
1SS302
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
V_RM
V_R
I_FM
I_O
I_FSM
P
T_j
T_stg
85
80
300 (*)
100 (*)
2 (*)
100
125
−55~125
V
V
mA
mA
A
JEDEC
―
mW
EIAJ
SC-70
°C
TOSHIBA
1-2P1C
°C
Weight: 0.006g
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 30V
― V_R = 80V
― V_R = 0, f = 1MHz
― I_F = 10mA, Fig.1
Min Typ. Max Unit
― 0.60 ―
― 0.72 ―
V
― 0.90 1.20
―
―
0.1
μA
―
―
0.5
―
0.9 3.0
pF
―
1.6 4.0
ns
1
2007-11-01