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1SS300_14 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type | |||
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS300
Ultra High Speed Switching Applications
1SS300
Unit: mm
z Small package
: SC-70
z Low forward voltage
: VF (3) = 0.92V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 2.2pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300 (*)
mA
Average forward current
IO
100 (*)
mA
Surge current (10ms)
Power dissipation
IFSM
P
2 (*)
A
100
mW
Junction temperature
Storage temperature
Tj
125
°C
JEDEC
Tstg
â55 to 125
°C
JEITA
â
SC-70
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-2P1A
temperature/current/voltage and the significant change in
Weight: 0.006g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating à 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
â IF = 1mA
â IF = 10mA
â IF = 100mA
â VR = 30V
â VR = 80V
â VR = 0, f = 1MHz
â IF = 10mA, Fig.1
Min Typ. Max Unit
â 0.61 â
â 0.74 â
V
â 0.92 1.20
â
â
0.1
μA
â
â
0.5
â
2.2 4.0
pF
â
1.6 4.0
ns
Start of commercial production
1986-11
1
2014-03-01
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