1SS293_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Low Voltage High Speed Switching

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS293
Low Voltage High Speed Switching
1SS293
Unit: mm
z Low forward voltage
z Low reverse surrent
z Small package
: V_{F (3)} = 0.54V (typ.)
: I_R = 5μA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
45
V
Reverse voltage
V_R
40
V
Maximum (peak) forward current
I_FM
300
mA
Average forward current
I_O
100
mA
Power dissipation
P
300
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
EIAJ
TOSHIBA
Weight: 0.13g
SC−61
1−4E2D
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 40V
― V_R = 0, f = 1MHz
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.54 0.60
―
―
5
μA
―
18
25
pF
1
2007-11-01