1SS272_14 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS272
Ultra High Speed Switching Application
z Low forward voltage
: V_{F (3)} = 0.92V (typ.)
z Fast reverse recovery time : t_rr = 1.6ns (typ.)
z Small total capacitance : C_T = 0.9pF (typ.)
1SS272
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
V_RM
V_R
I_FM
I_O
85
V
80
V
300 *
mA
100 *
mA
1. CATHODE 1
2. CATHODE 2
3. ANODE 2
4. ANODE 1
Surge current (10ms)
I_FSM
2*
A
Power dissipation
P
150 *
mW
Junction temperature
Storage temperature range
T_j
125
°C
JEDEC
T_stg
−55 to 125
°C
JEITA
TOSHIBA
―
SC−61
2−3J1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 13 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = Unit rating × 1.5.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test Condition
I_F = 1mA
I_F = 10mA
I_F = 100mA
V_R = 30V
V_R = 80V
V_R = 0, f = 1MH_z
I_F = 10mA, Fig.1
Min
Typ.
Max
Unit
―
0.61
―
―
0.74
―
V
―
0.92
1.2
―
―
0.1
μA
―
―
0.5
―
0.9
2.0
pF
―
1.6
4.0
ns
Start of commercial production
1984-10
1
2014-03-01