1SS250TE85L Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS250
Ultra High Speed Switching Application
z Low forward voltage
: V_{F (2)} = 0.90V (typ.)
z Fast reverse recovery time : t_rr = 60ns (max)
z Small total capacitance : C_T = 1.5pF (typ.)
z Small package
: SC−59
1SS250
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Peak reverse voltage
V_RM
250
V
Reverse voltage
V_R
200
V
Peak forward current
I_FM
300
mA
Average forward current
Surge current (10 ms)
I_O
I_FSM
100
mA
2
A
Power dissipation
P
150
mW
Junction temperature
Storage temperature range
T_j
125
°C
JEDEC
T_stg
−55~125
°C
JEITA
−
SC−59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
1−3G1B
Weight: 0.012g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 10mA
― I_F = 100mA
― V_R = 50V
― V_R = 200V
― V_R = 0, f = 1MHz
― I_F = 10mA (Fig.1)
Min Typ. Max Unit
― 0.72 1.00
V
― 0.90 1.20
―
―
0.1
μA
―
―
1.0
―
1.5 3.0
pF
―
10
60
ns
Fig.1 Reverse recovery time (t_rr) test circuit
Marking
1
2007-11-01