1SS196_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS196
1SS196
Ultra High-Speed Switching Applications
z Small package: SC-59
z Low forward voltage: V_{F (3)} = 0.9 V (typ.)
z Fast reverse recovery time: t_rr = 1.6 ns (typ.)
z Small total capacitance: C_T = 0.9 pF (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
85
V
Reverse voltage
V_R
80
V
Maximum (peak) forward current
I_FM
300
mA
Average forward current
I_O
100
mA
Surge current (10ms)
I_FSM
2
A
Power dissipation
P
150
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55 to 125
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
SC-59
TOSHIBA
1-3G1A
Weight: 0.012 g (typ.)
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 1 mA
― I_F = 10 mA
― I_F = 100 mA
― V_R = 30 V
― V_R = 80 V
― V_R = 0, f = 1 MHz
― I_F = 10 mA (Fig.1)
Min Typ. Max Unit
― 0.60 ―
― 0.72 ―
V
― 0.90 1.20
―
―
0.1
μA
―
―
0.5
―
0.9 3.0
pF
―
1.6 4.0
ns
Marking
Start of commercial production
1982-05
1
2014-03-01