1SS184_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS184
1SS184
Ultra High-Speed Switching Applications
Unit: mm
z Small package: SC-59
z Low forward voltage: V_{F (3)} = 0.9 V (typ.)
z Fast reverse recovery time: t_rr = 1.6 ns (typ.)
z Small total capacitance: C_T = 0.9 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
V_RM
V_R
I_FM
I_O
I_FSM
P
85
V
80
V
300*
mA
100*
mA
2*
A
150
mW
Junction temperature
Storage temperature
T_j
125
°C
T_stg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
TO-236MOD
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
JEITA
SC-59
TOSHIBA
1-3G1F
Weight: 0.012 g (typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5.
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― IF = 1 mA
― IF = 10 mA
― IF = 100 mA
― VR = 30 V
― VR = 80 V
― VR = 0, f = 1 MHz
― IF = 10 mA (Fig.1)
Min Typ. Max Unit
― 0.60 ―
― 0.72 ―
V
― 0.90 1.20
―
―
0.1
μA
―
―
0.5
―
0.9
3.0
pF
―
1.6
4.0
ns
Marking
Start of commercial production
1982-03
1
2014-03-01