1SS181_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

TOSHIBA Diode Silicon Epitaxial Planar Type
1SS181
1SS181
Ultra High Speed Switching Application
Unit: mm
z Small package
: SC-59
z Low forward voltage
: V_{F (3)} = 0.92V (Typ.)
z Fast reverse recovery time : t_rr = 1.6ns (Typ.)
z Small total capacitance : C_T = 2.2pF (Typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
85
V
Reverse voltage
V_R
80
V
Maximum (peak) forward current
I_FM
300 (*)
mA
Average forward current
I_O
100 (*)
mA
Surge current (10ms)
I_FSM
2 (*)
A
Power dissipation
P
150
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
TO-236MOD
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
TOSHIBA
1-3G1E
Weight: 0.012g (typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = Unit rating × 1.5.
Electrical Characteristics
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 1mA
― IF = 10mA
― IF = 100mAs
― VR = 30V
― VR = 80V
― VR = 0, f = 1MHz
― IF = 10mA (Fig.1)
Min Typ. Max Unit
― 0.61 ―
― 0.74 ―
V
― 0.92 1.20
―
―
0.1
μA
―
―
0.5
―
2.2
4.0
pF
―
1.6
4.0
ns
Marking
Start of commercial production
1982-06
1
2014-03-01