1SS154_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – UHF-S Band Mixer/Detector Applications

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS154
1SS154
UHF~S Band Mixer/Detector Applications
• Small package.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature range
V_R
6
V
I_F
30
mA
T_j
125
°C
T_stg
−30 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Forward voltage
Forward voltage
Total capacitance
Symbol
V_R
I_R
V_{F (1)}
V_{F (2)}
C_T
Test Condition
I_R = 10 μA
V_R = 5 V
I_F = 0.1 mA
I_F = 10 mA
V_R = 0, f = 1 MHz
Marking
Unit: mm
JEDEC
―
JEITA
SC-59
TOSHIBA
1-3G1A
Weight: 12 mg (typ.)
Min Typ. Max Unit
6
⎯
⎯
V
⎯
⎯
0.5
μA
⎯
⎯
0.35
V
⎯
0.5
⎯
V
⎯
0.8
⎯
pF
Start of commercial production
1981-01
1
2014-03-01