1JH46TPA3 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE

TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE
1JH46
1JH46
SWITCHING MODE POWER SUPPLY APPLICATIONS
z Repetitive Peak Reverse Voltage : V_RRM = 600V
z Average Forward Current
: I_{F (AV)} = 1.0A
z Very Fast Reverse−Recovery Time : t_rr = 200ns (Max)
Unit: mm
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
Average Forward Current
(Ta = 25°C)
Peak One Cycle Surge Forward
Current (Non−Repetitive)
Junction Temperature Range
Storage Temperature Range
V_RRM
600
V
I_{F (AV)}
1.0
A
I_FSM
T_j
T_stg
15 (50Hz)
A
17 (60Hz)
−40 to 150
°C
−40 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEITA
TOSHIBA
―
3-3F2A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.18 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
SYMBOL
TEST CONDITION
V_FM
I_RRM
t_rr
t_fr
R_{th (j−a)}
I_FM = 1.0A
V_RRM = 600V
I_F = 1A, di / dt = −30A / μs
I_F = 1.0A
Junction to Ambient
MIN TYP. MAX UNIT
―
―
1.2
V
―
―
100
μA
―
―
200
ns
―
―
500
ns
―
―
115 °C / W
MARKING
Part No. (or abbreviation code)
Lot No.
A line indicates
JH6
lead (Pb)-free package or
lead (Pb)-free finish.
Abbreviation Code
JH6
Part No.
1JH46
1
2011-01-05