16FL2C41A_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SWITCHING MODE POWER SUPPLY APPLICATION

16FL2C41A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
16FL2C41A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Unit: mm
z Repetitive Peak Reverse Voltage : V_RRM = 300 V
z Average Output Rectified Current : I_O = 16 A
z Ultra Fast Reverse−Recovery Time : t_rr = 35ns (Max)
z Low Switching Loss and Output Noise
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V_RRM
300
V
Average Output Rectified Current
(Full Sine Waveform)
I_O
16
A
Peak One Cycle Surge Forward
Current (Non−Repetitive)
I_FSM
80 (50Hz)
A
88 (60Hz)
Junction Temperature
Strage Temperature Range
T_j
−40~150
°C
JEDEC
⎯
T_stg
−40~150
°C
JEITA
⎯
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
12−16D1A
Weight: 4.85 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
POLARITY
MARKING
16FL2C
Characteristics
indicator
Abbreviation Code
16FL2C
Part No.
16FL2C41A
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-08