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16DL2CZ47A_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – SWITCHING MODE POWER SUPPLY APPLICATION
16DL2CZ47A,16FL2CZ47A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
16DL2CZ47A,16FL2CZ47A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Unit: mm
z Repetitive Peak Reverse Voltage : VRRM = 200 V, 300 V
z Average Output Rectified Current : IO = 16 A
z Ultra Fast Reverse−Recovery Time : trr = 35 ns (Max)
z Low Switching Losses and Output Noise
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
Reverse Voltage
16DL2CZ47A
16FL2CZ47A
VRRM
200
100
V
Average Output Rectified Current
(Full Sine Waveform)
IO
16
A
Peak One Cycle Surge Forward
Current (Non−Repetitive)
IFSM
80 (50Hz)
A
88 (60Hz)
Junction Temperature
Tj
−40~150
°C
JEDEC
⎯
Storage Temperature Range
Tstg
−40~150
°C
JEITA
⎯
Screw Torque
―
0.6
N·m
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
12−10C1A
temperature/current/voltage and the significant change in
Weight: 2.0 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward
16DL2CZ47A
Voltage
(Note 1) 16FL2CZ47A
Repetitive Peak ReverseCurrent
(Note 1)
Reverse Recovery Time (Note 1)
Forward Recovery Time (Note 1)
Thermal Resistance
VFM
IRRM
trr
tfr
Rth (j−c)
IFM = 8A
VRRM = Rated
IF = 2.0A, di / dt = −50A / μs
IF = 1.0A
Total DC, Junction to Case
Note 1: A value applied to one cell.
MIN TYP. MAX UNIT
―
― 0.98
V
―
―
1.3
―
―
50
μA
―
―
35
ns
―
―
100
ns
―
―
3.3 °C / W
POLARITY
1
2006-11-08