16DL2CZ47A Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

16DL2CZ47A,16FL2CZ47A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
16DL2CZ47A,16FL2CZ47A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Unit: mm
l Repetitive Peak Reverse Voltage : VRRM = 200, 300V
l Average Output Rectified Current : IO = 16A
l Ultra Fast Reverse−Recovery Time : trr = 35ns (Max)
l Low Switching Losses and Output Noise.
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak
Reverse Voltage
16DL2CZ47A
16FL2CZ47A
Average Output Rectified Current
(Full Sine Waveform)
Peak One Cycle Surge Forward
Current (Non−Repetitive)
Junction Temperature
Storage Temperature Range
Screw Torque
SYMBOL
V_RRM
I_O
I_FSM
T_j
T_stg
―
RATING
200
100
16
80 (50Hz)
88 (60Hz)
−40~150
−40~150
0.6
UNIT
V
A
A
°C
°C
N·m
JEDEC
JEITA
TOSHIBA
Weight: 2.0g
―
―
12−10C1A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Peak Forward
16DL2CZ47A
Voltage
(Note 1) _16FL2CZ47A
Repetitive Peak ReverseCurrent
(Note 1)
Reverse Recovery Time (Note 1)
Forward Recovery Time
(Note 1)
Thermal Resistance
Note 1: A value of one cell.
SYMBOL
V_FM
I_RRM
t_rr
t_fr
R_{th (j−c)}
TEST CONDITION
I_FM = 8A
V_RRM = Rated
I_F = 2.0A, di / dt = −50A / µs
I_F = 1.0A
DC Total, Junction to Case
MIN TYP. MAX UNIT
―
― 0.98
V
―
―
1.3
―
―
50
µA
―
―
35
ns
―
―
100
ns
―
―
3.3 °C / W
POLARITY
MARKING
16DL2CZ
* 1 MARK
TYPE
16FL2CZ
*2
A
*3
16DL2CZ47A
16FL2CZ47A
1
2001-07-13