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16DL2C41A_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SWITCHING MODE POWER SUPPLY APPLICATION
16DL2C41A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
16DL2C41A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Unit: mm
z Repetitive Peak Reverse Voltage : VRRM=200V
z Average Output Rectified Current : IO=16A
z Ultra Fast Reverse−Recovery Time : trr=35ns (Max)
z Low Forward Voltage
: VFM=0.98V (Max)
z Low Switching Losses and Output Noise
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
200
V
Average Output Rectified Current
(Full Sine Waveform)
IO
16
A
Peak One Cycle Surge Forward
Current (Non−Repetitive)
IFSM
80 (50Hz)
A
88 (60Hz)
Junction Temperature
Tj
−40~150
°C
JEDEC
⎯
Strage Temperature Range
Tstg
−40~150
°C
JEITA
⎯
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
12-16D1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 4.85 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
POLARITY
MARKING
16DL2C
Characteristics
indicator
Abbreviation Code
16DL2C
Part No.
16DL2C41A
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-08