10JL2CZ47_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SWITCHING MODE POWER SUPPLY APPLICATION

10JL2CZ47
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
10JL2CZ47
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Unit: mm
z Repetitive Peak Reverse Voltage : V_RRM = 600 V
z Average Output Rectified Current : I_O = 10 A
z Ultra Fast Reverse−Recovery Time : t_rr = 50 ns (Max)
z Low Switching Losses and Output Noise
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V_RRM
600
V
Average Output Rectified Current
I_O
10
A
Peak One Cycle Surge Forward
Current (Sine Wave)
I_FSM
50 (50Hz)
A
55 (60Hz)
Junction Temperature
Storage Temperature Range
Screw Torque
T_j
−40~150
°C
JEDEC
―
T_stg
−40~150
°C
JEITA
―
―
0.6
N·m
TOSHIBA
12−10C1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 2.0g
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward Voltage
Repetitive Peak Reverse
Current
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
(Note 1)
(Note 1)
(Note 1)
(Note 1)
V_FM
I_RRM
t_rr
t_fr
R_{th (j−c)}
I_FM = 5A
V_RRM = 600V
I_F = 2A, di / dt = −20A / μs
I_F = 1A
Total DC, Junction to Case
Note 1: A value applied to one cell.
MIN TYP. MAX UNIT
―
―
2.0
V
―
―
50
μA
―
―
50
ns
―
―
150
ns
―
―
3.6 °C / W
POLARITY
1
2006-11-08