10FWJ2CZ47M_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE

10FWJ2CZ47M
TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE
10FWJ2CZ47M
LOW FORWARD VOLTAGE SCHOTTKY BARRIER
DIODE
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Unit: mm
• Peak Forward Voltage: V_FM ≤ 0.47V
• Repetitive Peak Reverse Voltage: V_RRM = 30V
• Average Output Rectified Current: I_O = 10A
• Low Switching Losses and Output Noise.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sine Wave)
Junction Temperature
Storage Temperature Range
Screw Torque
V_RRM
I_O
I_FSM
T_j
T_stg
―
30
10
100 (50Hz)
110 (60Hz)
−40~125
−40~150
0.6
V
A
A
°C
°C
N·m
JEDEC
―
JEITA
―
TOSHIBA
12-10C1A
Weight: 2.0 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward Voltage
(Note 1)
Repetitive Peak Reverse Current
(Note 1)
Junction Capacitance
(Note 1)
Thermal Resistance
V_FM
I_RRM
C_j
R_{th (j−c)}
I_FM = 5A
V_RRM = 30V
V_R = 10V, f = 1.0MHz
Total DC, Junction to Case
Note 1: A value applied to one cell.
MIN TYP. MAX UNIT
―
― 0.47
V
―
―
3.5 mA
―
290
―
pF
―
―
3.0 °C / W
POLARITY
1
2006-11-10