10DL2CZ47A_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – SWITCHING MODE POWER SUPPLY APPLICATIONS

10DL2CZ47A,10FL2CZ47A,10GL2CZ47A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
10DL2CZ47A, 10FL2CZ47A, 10GL2CZ47A
SWITCHING MODE POWER SUPPLY APPLICATIONS
CONVERTER & CHOPPER APPLICATION
Unit in mm
• Repetitive Peak Reverse Voltage : V_RRM = 200 V, 300 V, 400 V
• Average Output Rectified Current : I_O = 10 A
• Ultra Fast Reverse-Recovery Time : t_rr = 35 ns (Max)
• Low Switching Losses and Output Noise
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak
Reverse Voltage
10DL2CZ47A
10FL2CZ47A
10GL2CZ47A
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sine Wave)
Junction Temperature
Storage Temperature Range
Screw Torque
SYMBOL
V_RRM
I_O
I_FSM
T_j
T_stg
―
RATING
200
300
400
10
50 (50Hz)
55 (60Hz)
−40~150
−40~150
0.6
UNIT
V
A
A
°C
°C
N·m
JEDEC
JEITA
TOSHIBA
Weight : 2.0g
―
―
12-10C1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Peak Forward
Voltage
10DL2CZ47A
(Note 1) ^10FL2CZ47A
10GL2CZ47A
Repetitive Peak
Reverse Current
(Note 1)
10DL2CZ47A
10FL2CZ47A
10GL2CZ47A
Reverse Recovery Time
(Note 1)
Forward Recovery Time
(Note 1)
Thermal Resistance
Note 1 : A value applied to one cell.
SYMBOL
TEST CONDITION
V_FM
I_FM=5A
I_RRM
V_RRM=Rated
t_rr
t_fr
R_{th (j-c)}
I_F=2A, di / dt=−20A / μs
I_F=1A
Total DC, Junction to Case
MIN. TYP. MAX. UNIT
―
― 0.98
―
―
1.3
V
―
―
1.8
―
―
10
―
―
10 μA
―
―
50
―
―
―
ns
―
―
―
ns
―
―
― °C / W
1
2006-11-08