0R8GU41 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA RECTIFIER SILICON DIFFUSED TYPE

TOSHIBA RECTIFIER SILICON DIFFUSED TYPE
0R8GU41
HIGH SPEED RECTIFIER APPLICATIONS
(FAST RECOVERY)
l Average Forward Current
l Repetitive Peak Reverse Voltage
l Reverse Recovery Time
l Plastic Mold Type
: IF (AV) = 0.8A (Ta = 40°C)
: VRRM = 400V
: trr = 100ns (Max)
0R8GU41
Unit: mm
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Forward Current
(Ta = 40°C)
Peak One Cycle Surge Forward
Current (Non−Repetitive)
Junction Temperature
Storage Temperature Range
SYMBOL
V_RRM
I_{F (AV)}
I_FSM
T_j
T_stg
RATING
400
0.8
30 (50Hz)
33 (60Hz)
−40~150
−40~150
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
UNIT
V
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.3g
DO−41
―
3−3C1A
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
Thermal Resistance
SYMBOL
TEST CONDITION
V_FM
I_RRM
t_rr
t_fr
R_{th (j−a)}
R_{th (j−ℓ)}
I_FM = 1.0A
V_RRM = 400V
I_F = 1.0A, di / dt = −30A / µs
I_F = 1.0A
Junction to Ambient
Junction to Lead
MIN MAX UNIT
―
1.5
V
―
50
µA
―
100
ns
―
200
ns
―
115 °C / W
―
45 °C / W
MARKING
1
2002-09-17