015AZ2.0 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

015AZ2.0~015AZ12
TOSHIBA Diode Silicon Epitaxial Planar Type
015AZ2.0~015AZ12
Constant Voltage Regulation Applications
Unit: mm
l Small package
l Nominal voltage tolerance about ±2.5%
(2.0V~12V)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
P*
150
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
-55~125
°C
* Mounted on a glass epoxy circuit board of 20 × 20mm,
Pad dimension of 4 × 4mm.
Electrical Characteristics
(See Page 2~3)
JEDEC
JEITA
TOSHIBA
Weight: 1.4 mg
―
―
1-1G1A
Marking
Example 1: 015AZ12-×
Example 2: 015AZ12-×
Pin Assignment (top view)
1
2001-10-30