XC641A Datasheet, PDF (8/20 Pages) Torex Semiconductor – CMOS Low Power Consumption

9$"
4FSJFT
Voltage Detector 1
PARAMETER
Detect Voltage
Hysteresis Range
Input Current
Output Current
Detect Voltage
Temperature Characteristics
SYMBOL
VDF
VHYS
IIN
IOUT
∆ VDF
∆Topr • VOUT
CONDITIONS
VIN = VINDEF
VIN = VINDEF
VIN = VINDEF
Nch VDS = 0.5V
VIN = VINDEF
MIN
3.332
x 0.02
TYP
3.4
VDF
x 0.05
0.8
MAX
3.468
x 0.08
1.4
6.0
11.5
UNITS
V
Ta=25° C
CIRCUIT
4
V
4
µA
4
mA
3
± 100
ppm/ ° C
4
Voltage Detector 2
PARAMETER
Detect Voltage
Hysteresis Range
Input Current
Output Current
Delay Circuit Current
Detect Voltage
Temperature Characteristics
SYMBOL
VDF
VHYS
IIN
IOUT
ICDO
∆VDF
∆Topr • VOUT
CONDITIONS
VIN = VINDEF
VIN = VINDEF
VIN = VINDEF
Nch VDS = 0.5V
VIN = VINDEF
VIN = VINDEF
MIN
2.450
x 0.02
TYP
2.5
VDF
x 0.05
0.8
MAX
2.550
x 0.08
1.4
UNITS
V
Ta=25° C
CIRCUIT
4
V
4
µA
4
6.0
11.5
mA
3
0.25 0.50 0.80
µA
5
± 100
ppm/ ° C
4
Note :
The delay circuit current is controlled by the set current circuit within the IC.
Delay time depends upon the capacity of the external condensor. Approximate delay time can be calculated using the following formula :
TD ( msec ) = 1.8 x C ( nF )
10
Input Pin
PARAMETER
EN 'High Level' Voltage
EN 'Low Level' Voltage
EN 'High Level' Current
EN 'Low Level' Voltage
SYMBOL
VENH
VENL
IENH
IENL
CONDITIONS
Ta=25° C
MIN
TYP MAX UNITS CIRCUIT
1.3
V
1
0.4
V
1
0.1
µA
1
-0.5
0
µA
1
Entire Circuit
PARAMETER
Supply Current
( Stand-By )
SYMBOL
ISS
ISTB
Ta=25° C
CONDITIONS
MIN
TYP MAX UNITS CIRCUIT
VIN = 8V, No Load
VIN = 8V, VR1 = VR2 = VR3 = OFF
25
37.5
µA
2
6.0
9.0
µA
2
Note :
The supply current (ISS) value of the entire IC is the IC's internal supply current value.
( This does not include current flowing through externally connected components nor
the input current through the detect pins of voltage detectors 1, 2 )
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