XC2164_1 Datasheet, PDF (6/11 Pages) Torex Semiconductor – CMOS Low Power Consumption

XC2164 Series
■ELECTRICAL CHARACTERISTICS (Continued)
XC2164A51T, V / XC2164K51T, V (Fundamental)
PARAMETER
Operating Voltage
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
SYMBOL
VDD
VIH
VIL
VOH
VOL
Supply Current 1
IDD1
Supply Current 2
IDD2
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation
Feedback Resistance
Output Disable
Leakage Current
Rup1
Rup2
Rf
IOZ
3.3V operation (unless otherwise stated, VDD=3.3V, No Load, Ta=-30~+80℃)
CONDITIONS
MIN. TYP. MAX. UNITS
2.50 3.30 3.63
V
2.4
-
-
V
-
-
0.4
V
CMOS: 2.97V, IOH=-8mA
2.5
-
-
V
CMOS: 2.97V, IOH=8mA
-
-
0.4
V
/INH=Open,
Q0=Open,
f=30MHz
XC2164A51T
XC2164A51V
XC2164K51T
XC2164K51V
-
4
(6.5)
-
5
(8)
mA
-
4
(6.5)
-
5
(8)
/INH="L",
Q0=Open,
f=30MHz
XC2164A51T
XC2164A51V
XC2164K51T
XC2164K51V
-
2
(4)
μA
-
2
(4)
- (T.B.D.*) (T.B.D.*) _mA
- (T.B.D.*) (T.B.D.*)
/INH="L"
1.0
2.0 4.0
MΩ
/INH=0.7 VDD
35
70 140
kΩ
-
7.0
-
MΩ
/INH="L"
-
-
10
μA
* T.B.D.: To be determined
Comparative Chart of Oscillation Frequency vs. Supply Voltage, and Negative Resistance Value
SYMBOL
M
V
T
OSCILLATION FREQUENCY vs. SUPPLY VOLTAGE
VDD=3.3V±10%
VDD=5.0V±10%
±4.3ppm
±4.5ppm
±1.2ppm
±2.1ppm
±9.4ppm
±7.0ppm
NEGATIVE RESISTANCE VALUE
VDD=3.3V
VDD=5.0V
-130Ω
-220Ω
-150Ω
-250Ω
-660Ω
-760Ω
(The designed value when 30MHz crystal is used.)
1688