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XC2408_12 Datasheet, PDF (5/18 Pages) Torex Semiconductor – 1.6GHz ON/OFF Function LNA
XC2408A816UR-G
■ELECTRICAL CHARACTERISTICS
˔DC Characteristics
PARAMETER
SYMBOL
Power Supply Voltage
VDD
Current Circuit
Stand-by Current
CE "H" Level Voltage
CE "L" Level Voltage
IDD
ISTBY
VCEH
VCEL
CONDITIONS
RBIAS=360Ω (*2)
RBIAS=270Ω (*2)
RBIAS=240Ω (*2)
RBIAS=92Ω (*2)
1.71VʽVDDʽ3.63V (*1)
VCE=VDD
1.71VʽVDDʽ3.63V (*1)
VCE=0V
1.71VʽVDDʽ3.15V
3.15V<VDDʽ3.63V
-
MIN.
3.278
2.850
2.708
1.710
TYP.
3.450
3.000
2.850
1.800
MAX.
3.630
3.150
2.992
1.890
-
7.0
9.6
-
-
0.1
1.1
-
VDD
1.3
-
VDD
0
-
0.4
(*1) For the relation of VDD and RBIAS, Please refer to the “Power Supply Voltage vs. RBIAS Table” below.
(*2) RBIAS should be used in ʶ1% tolerance and ʶ200ppm/ˆ temperature stability.
UNITS
V
V
V
V
mA
ЖA
V
V
V
Ta=25ˆ
CIRCUIT
①
①
①
①
①
①
①
①
①
˔AC Characteristics
PARAMETER
Power Gain
Input Return Loss
SYMBOL
S21
S11
CONDITIONS
f=1.575GHz
f=1.575GHz
MIN.
16.0
VDD=VCE=2.85V, RBIAS=240Ω, Ta=25ˆ
TYP. MAX. UNITS CIRCUIT
22.0
-
dB
②
-
7.0
-
dB
②
Output Return Loss
S22
f=1.575GHz
-
17.0
-
dB
②
Isolation
Noise Figure (*1)
Input Power IP3
Input Power IP2
S12
f=1.575GHz
-
-33.0
-
dB
②
NF
f=1.575GHz
-
0.96
-
dB
③
IIP3
f=1.575GHz, 1.576GHz
-
-15.5
-
dBm
④
IIP2
f=0.8GHz, 2.345GHz
-
13.2
-
dBm
④
Input Power @ 1dB
Gain Conpression
P1dB
f=1.575GHz
-
-24.0
-
dBm
②
(*1) NF is the value excluding the substrate loss.
Power Supply Voltage vs. RBIAS
VDD [V]
RBIAS [Ω]
3.278~3.630
360
2.850~3.150
270
2.708~2.992
240
1.710~1.890
92
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