XC2407_12 Datasheet, PDF (5/18 Pages) Torex Semiconductor – 1.6GHz ON/OFF Function LNA

XC2407A816UR-G
■ELECTRICAL CHARACTERISTICS
˔DC Characteristics
Ta=25ˆ
PARAMETER
SYMBOL
CONDITIONS
MIN. TYP. MAX.
Power Supply Voltage
V_DD
Current Circuit
Stand-by Current
CE "H" Level Voltage
I_DD
I_STBY
V_CEH
R_BIAS=620Ω ^(*2)
R_BIAS=470Ω ^(*2)
R_BIAS=430Ω ^(*2)
R_BIAS=150Ω ^(*2)
1.71VʽV_DDʽ3.63V ^(*1)
V_CE=V_DD
1.71VʽV_DDʽ3.63V ^(*1)
V_CE=0V
1.71VʽV_DDʽ3.15V
3.15V<V_DDʽ3.63V
3.278
2.850
2.708
1.710
3.450
3.000
2.850
1.800
3.630
3.150
2.992
1.890
-
3.9
7.5
-
-
0.1
1.1
-
V_DD
1.3
-
V_DD
CE "L" Level Voltage
V_CEL
-
0
-
0.4
(*1) _{For the relation of VDD and RBIAS, Please refer to the “Power Supply Voltage vs. RBIAS Table” below.}
(*2) _{RBIAS should be used in ʶ1% tolerance and ʶ200ppm/ˆ temperature stability.}
UNITS
V
V
V
V
mA
μA
V
V
V
CIRCUIT
①
①
①
①
①
①
①
①
①
●AC Characteristics
PARAMETER
SYMBOL
CONDITIONS
Power Gain
S21
f=1.575GHz
Input Return Loss
S11
f=1.575GHz
Output Return Loss
S22
f=1.575GHz
Isolation
S12
Noise Figure ^(*1)
NF
f=1.575GHz
f=1.575GHz
Input Power IP3
I_IP3
f=1.575GHz, 1.576GHz
Input Power IP2
Input Power @ 1dB
Gain Conpression
I_IP２
P1dB
f=0.8GHz, 2.375GHz
f=1.575GHz
(*1) _{NF is the value excluding the substrate loss.}
MIN.
13.5
-
-
-
-
-
-
-
V_DD=V_CE=2.85V, R_BIAS=430Ω, Ta=25ˆ
TYP.
15.0
9.5
9.5
-20
0.96
-5.1
10.3
MAX.
-
-
-
-
-
-
-
UNITS
dB
dB
dB
dB
dB
dBm
dBm
CIRCUIT
②
②
②
②
③
④
④
-19
-
dBm
②
Power Supply Voltage vs. R_BIAS
V_DD [V]
R_BIAS [Ω]
3.278～3.630
620
2.850～3.150
470
2.708～2.992
430
1.710～1.890
150
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