XC2406_15 Datasheet, PDF (5/18 Pages) Torex Semiconductor – 1.6GHz ON/OFF Function LNA

XC2406A816UR-G
■ELECTRICAL CHARACTERISTICS
˔DC Characteristics
PARAMETER
SYMBOL
Power Supply Voltage
V_DD
Current Circuit
Stand-by Current
CE "H" Level Voltage
CE "L" Level Voltage
I_DD
I_STBY
V_CEH
V_CEL
CONDITIONS
R_BIAS=390Ω ^(*2)
R_BIAS=300Ω ^(*2)
R_BIAS=270Ω ^(*2)
R_BIAS=92Ω ^(*2)
1.71V≦V_DD≦3.63V ^(*1)
V_CE=V_DD
1.71V≦V_DD≦3.63V ^(*1)
V_CE=0V
1.71V≦V_DD≦3.15V
3.15V<V_DD≦3.63V
-
MIN.
3.278
2.850
2.708
1.710
TYP.
3.450
3.000
2.850
1.800
MAX.
3.630
3.150
2.992
1.890
-
6.6
8.9
-
-
0.1
1.1
-
V_DD
1.3
-
V_DD
0
-
0.4
(*1) _{For the relation of VDD and RBIAS, Please refer to the “Power Supply Voltage vs. RBIAS Table” below.}
(*2) _{RBIAS should be used in ʶ1% tolerance and ʶ200ppm/ˆ temperature stability.}
UNITS
V
V
V
V
mA
μA
V
V
V
Ta=25ˆ
CIRCUIT
①
①
①
①
①
①
①
①
①
●AC Characteristics
PARAMETER
SYMBOL
CONDITIONS
Power Gain
S21
f=1.575 GHz
Input Return Loss
S11
f=1.575GHz
Output Return Loss
S22
f=1.575GHz
Isolation
Noise Figure ^(*1)
Input Power IP3
Input Power IP2
Input Power @ 1dB
Gain Conpression
S12
NF
I_IP3
I_IP2
P1dB
f=1.575GHz
f=1.575GHz
f=1.575GHz, 1.576GHz
f=0.8GHz, 2.375GHz
f=1.575GHz
(*1) _{NF is the value excluding the substrate loss.}
Power Supply Voltage vs. R_BIAS
V_DD [V]
R_BIAS [Ω]
3.278～3.630
390
2.850～3.150
300
2.708～2.992
270
1.710～1.890
92
MIN.
15.0
-
-
-
-
-
-
-
V_DD=V_CE=2.85V, R_BIAS=270Ω, Ta=25ˆ
TYP.
18.0
7.5
13
-33
0.96
-20
12.2
MAX.
-
-
-
-
-
-
-
UNITS
dB
dB
dB
dB
dB
dBm
dBm
CIRCUIT
ᶄ
ᶄ
ᶄ
ᶄ
ᶅ
ᶆ
ᶆ
-28.0
-
dBm
ᶄ
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