XP202A0003MR_12 Datasheet, PDF (4/5 Pages) Torex Semiconductor – P-channel 4V (G-S) MOSFET

XP202A0003MR-G
˙TYPICAL PERFORMANCE CHARACTERISTICS
(7) Switching Time vs. Drain Current
(8) Ciss, Coss, Crss vs. Drain-Source Voltage
1000
XP202A0003MR
VGS= -10V, VDS= -15V
1000
XP202A0003MR
Ciss
f=1MHz
100
tf
10
td(on)
td(of f )
tr
Coss
100
Crss
1
0.1
1
10
Drain Current_： I_D (A)
10
0
5 10 15 20 25 30
Drain-Source Voltage_： V_DS (V)
(9) Gate-Source Voltage vs. Gate Charge
XP202A0003MR
-10
VDS= -15V, ID= -3A
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 1 2 3 4 5 6 7 8 9 10
Gate Charge: Qg (nc)
(10) Area of Safe Operation
100
I_D=-12A
10
I_D=-3A
1
XP202A0003MR
Operation in this area is
limited by R_DS(on)
0.1ms
1ms
0.1
0.01
Ta=25℃
Single pulse
When mounted on ceramic substrate
(900mm² X 0.8mm)
10ms
100ms
1000ms
DC Operation
0.01
0.1
1
10
100
Drain-Source Voltage: V_DS (V)
4/5