English
Language : 

XP161A1265PR Datasheet, PDF (4/4 Pages) Torex Semiconductor – Power MOS FET
˙ Electrical Characteristics
Capacitance vs. Drain/Source Voltage

7HT7 G.)[ 5Bˆ
$JTT
$PTT

$STT
Switching Time vs. Drain Current

7HT7 7EE˺7 18ЖT EVUZʽ 5Bˆ

UG
US

UE PGG
UE PO






%SBJO4PVSDF7PMUBHF7ET 7







%SBJO$VSSFOU*E "
Gate/Source Voltage vs. Gate Charge
7ET7 *E" 5Bˆ












(BUF$IBSHF2H OD
Reverse Drain Current vs. Source/Drain Voltage
5Bˆ 1VMTF5FTU



7

7



7HT7 7








4PVSDF%SBJO7PMUBHF7TE 7
Standardized Transition Thermal Resistance vs. Pulse Width
3UI DIB ˆ8  *NQMFNFOUFEPOBDFSBNJD1$#

4JOHMF1VMTF









1VMTF8JEUI18 T


u