XP134A02A1SR Datasheet, PDF (4/4 Pages) Torex Semiconductor – P-Channel Power MOS FET

91""43
11
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE

Vgs=0V, f=1MHz
SWITCHING TIME vs. DRAIN CURRENT



7HT7
7EE˺7
18µTFD
EVUZ≤
UG



$JTT
$PTT
$STT




Drain-Source Voltage:Vds (V)

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US
 ^UEÊ¢POÊ£



Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
Vds=-10V, Id=-4A










Gate Charge:Qg (nc)
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Pulse Test



7HTʹ7

7


 7







Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a)=62.5˚C/W, (Implemented on a glass epoxy PCB)


Single Pulse









Pulse Width:PW (sec)


794