XP132A1275SR_2 Datasheet, PDF (4/4 Pages) Torex Semiconductor – Power MOS FET

91"43
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE

7HT7
G.)[
5Bˆ
SWITCHING TIME vs. DRAIN CURRENT

7HT7
7EE˺7
18ЖT
EVUZ≤
5Bˆ


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$PTT
$STT
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US

UE PGG
UE PO
11






Drain-Source Voltage:Vds (V)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
7ET7
*E"
5Bˆ








Drain Current:Id (A)
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
5Bˆ

1VMTF
5FTU



7


7




7HT7 7






Gate Charge:Qg (nc)







Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
3UI
DIB

ˆ8

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PO
B
HMBTT
FQPYZ
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4JOHMF
1VMTF








Pulse Width:PW (sec)


738