XP132A0340SR Datasheet, PDF (4/4 Pages) Torex Semiconductor – P-Channel Power MOS FET

91"43
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE

Vgs=0V, f=1MHz
SWITCHING TIME vs. DRAIN CURRENT

Vgs=-5V, Vdd˺-10V, PW=10µsec. duty≤1%
11

$JTT
$PTT
$STT






Drain-Source Voltage:Vds (V)
UG

UE PGG


US
UE PO


Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
Vds=-10V, Id=-7A












Gate Charge:Qg (nc)
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Pulse Test


7HTʹ7

7



"








Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a)=50˚C/W, (Implemented on a glass epoxy PCB)


Single Pulse









Pulse Width:PW (sec)


758