XP131A0150SR Datasheet, PDF (4/4 Pages) Torex Semiconductor – Power MOS FET

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CAPACITANCE vs. DRAIN-SOURCE VOLTAGE

Vgs=0VHz, f=1MHz



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Drain-Source Voltage:Vds (V)
SWITCHING TIME vs. DRAIN CURRENT

Vgs=5V, Vdd˺10V, PW=10µsec. duty≤1%
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Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
Vds=10V, Id=7A










Gate Charge:Qg (nc)
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Pulse Test



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Source-Drain Voltage:Vsd (V)
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STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a)=50°C/W, (Implemented on a glass epoxy PCB)
Single Pulse




Pulse Width:PW (sec)


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