XP202A0003MR-12 Datasheet, PDF (3/5 Pages) Torex Semiconductor – P-channel 4V (G-S) MOSFET

XP202A0003MR-G
˙TYPICAL PERFORMANCE CHARACTERISTICS
(1) Drain Current vs. Drain-Source Voltage
(2) Drain Current vs. Drain-Source Voltage
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XP202A0003MR
-4.0
Ta= 25℃， Pulse Test
XP202A0003MR
-6
V_DS= -10V， Pulse Test
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.0
-16.0V
-10.0V
-6.0V
-4.5V
-4.0V
-3.5V
-3.0V
V_GS= -2.5V
-0.2 -0.4 -0.6 -0.8 -1.0
-5
-4
-3
Ta= 75_℃
-2
Ta= 25_℃
-1
Ta= -25_℃
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Drain-Source Voltage_： V_DS (V)
Gate-Source Voltage_： V_GS (V)
(3) Drain-Source On-State Resistance vs.
Gate-Source Voltage
XP202A0003MR
300
Ta= 25℃
250
200
150
I_D= -1.5A
100
I_D= -1.0A
50
0
0 -2 -4 -6 -8 -10 -12 -14 -16
Gate-Source Voltage_： V_GS (V)
(4) Drain-Source On-State Resistance vs.
Ambient Temperature
XP202A0003MR
140
120
V_GS= -4.0V, I_D= -1.0A
100 ^V_GS^{= -4.5V, I}_D^{= -1.5A}
80
60
40
20
V_GS= -10V, I_D= -1.5A
0
-50 -25 0 25 50 75 100 125 150
Ambient Temperature_： Ta (_℃)
(5) Forward Transfer Admittance vs. Drain Current
XP202A0003MR
100
V_DS= -10V
Ta= -25℃
10
Ta=25℃
(6) Source Current vs. Diode Forward Voltage
XP202A0003MR
10
V_GS= 0V
Ta= 75_℃
1
Ta=25_℃
1
0.1
0.01
Ta=75℃
0.1
1
10
Drain Current_： I_D (A)
0.1
0.01
-0.2
Ta=-25_℃
-0.4 -0.6 -0.8 -1.0 -1.2
Diode Forw ard Voltage_： V_SD (V)
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