XP161A1355PR-12 Datasheet, PDF (2/5 Pages) Torex Semiconductor – Power MOSFET

XP161A1355PR-G
■ELECTRICAL CHARACTERISTICS
DC Characteristics
PARAMETER
SYMBOL
CONDITIONS
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Idss
Igss
Vgs(off)
Drain-Source On-State Resistance *1 Rds(on)
Vds=20V, Vgs= 0V
Vgs= ±8V, Vds= 0V
Id= 1mA, Vds= 10V
Id= 2A, Vgs= 4.5V
Id= 2A, Vgs= 2.5V
Id= 0.5A, Vgs= 1.5V
Forward Transfer Admittance *1 | Yfs |
Id= 2A, Vds= 10V
Body Drain Diode
Forward Voltage
Vf
*1 Effective during pulse test.
If= 4A, Vgs= 0V
MIN.
-
-
0.5
-
-
-
TYP.
-
-
-
0.037
0.05
0.1
Ta = 25℃
MAX. UNITS
10
μA
±10 μA
1.2
V
0.050
Ω
0.07
Ω
0.15
Ω
-
10
-
S
-
0.85 1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds= 10V, Vgs=0V
f= 1MHz
MIN.
-
-
-
TYP.
390
210
90
Ta = 25℃
MAX. UNITS
-
pF
-
pF
-
pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs= 5V, Id=2A
Vdd= 10V
MIN.
-
-
-
-
TYP.
10
15
85
45
Ta = 25℃
MAX. UNITS
-
ns
-
ns
-
ns
-
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
CONDITIONS
MIN.
Rth (ch-a) Implement on a ceramic PCB
-
TYP. MAX. UNITS
62.5
-
℃/W
2/5