XP151A12A2MR Datasheet, PDF (2/4 Pages) Torex Semiconductor – Power MOS FET

˙Electrical Characteristics
DC characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state Resistance
( note )
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
SYMBOL
Idss
Igss
Vgs (off )
Rds ( on )
| Yfs |
Vf
( note ) : Effective during pulse test.
CONDITIONS
Vds = 20 , Vgs = 0V
Vgs = ± 12 , Vds = 0V
Id = 1mA , Vds = 10V
Id = 0.5A , Vgs = 4.5V
Id = 0.5A , Vgs = 2.5V
Id = 0.5A , Vds = 10V
If = 1A , Vgs = 0V
Ta=25° C
MIN
TYP MAX
UNITS
10
µA
± 10
µA
0.7
1.4
V
0.075 0.1
Ω
0.12 0.16
Ω
3.3
S
0.8
1.1
V
Dynamic characteristics
PARAMETER
SYMBOL
CONDITIONS
Ta=25° C
MIN
TYP MAX
UNITS
Input Capacitance
Ciss
180
pF
Output Capacitance
Coss
Vds = 10V , Vgs = 0V
120
pF
u
Feedback Capacitance
Crss
f = 1 MHz
45
pF
Switching characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td ( on )
tr
td ( off )
tf
CONDITIONS
Vgs = 5V , Id = 0.5A
Vdd = 10V
Ta=25° C
MIN
TYP MAX
UNITS
10
ns
15
ns
50
ns
45
ns
Thermal characteristics
PARAMETER
Thermal Resistance
( channel - surroundings )
SYMBOL
Rth ( ch - a )
CONDITIONS
Implement on a ceramic
PCB
MIN
TYP MAX
UNITS
250
°C / W