XP151A11B0MR-12 Datasheet, PDF (2/5 Pages) Torex Semiconductor – Power MOSFET

XP151A11B0MR-G
■ELECTRICAL CHARACTERISTICS
DC Characteristics
PARAMETER
SYMBOL
CONDITIONS
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Idss
Igss
Vgs(off)
Drain-Source On-State Resistance *1 Rds(on)
Vds= 30V, Vgs= 0V
Vgs= ±20V, Vds= 0V
Id= 1mA, Vds= 10V
Id= 0.5A, Vgs= 10V
Id= 0.5A, Vgs= 4.5V
Forward Transfer Admittance *1 | Yfs |
Id= 0.5A, Vds= 10V
Body Drain Diode
Forward Voltage
Vf
*1 Effective during pulse test.
If= 1A, Vgs= 0V
MIN.
-
-
1.0
-
-
-
TYP.
-
-
-
0.09
0.13
2.4
Ta = 25℃
MAX. UNITS
10
μA
±10 μA
3.0
V
0.12
Ω
0.17
Ω
-
S
-
0.8
1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds= 10V, Vgs=0V
f=1MHz
MIN.
-
-
-
TYP.
150
90
30
Ta = 25℃
MAX. UNITS
-
pF
-
pF
-
pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs= 5V, Id= 0.5A
Vdd= 10V
MIN.
-
-
-
-
TYP.
10
15
25
45
Ta = 25℃
MAX. UNITS
-
ns
-
ns
-
ns
-
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
CONDITIONS
MIN.
Rth (ch-a) Implement on a ceramic PCB
-
TYP. MAX. UNITS
250
-
℃/W
2/5