XP131A1617SR_1 Datasheet, PDF (2/5 Pages) Torex Semiconductor – Power MOSFET

XP131A1617SR
■ELECTRICAL CHARACTERISTICS
DC Characteristics
PARAMETER
SYMBOL
CONDITIONS
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Drain-Source On-State Resistance *
Forward Transfer Admittance *
Idss
Igss
Vgs(off)
Rds(on)
| Yfs |
Vds=20V, Vgs=0V
Vgs=±12V, Vds=0V
Id=1mA, Vds=10V
Id=5A, Vgs=4.5V
Id=5A, Vgs=2.5V
Id=5A, Vds=10V
Body Drain Diode
Forward Voltage
Vf
If=10A, Vgs=0V
* Effective during pulse test.
MIN.
-
-
0.7
-
-
-
-
TYP.
-
-
-
0.010
0.013
32
0.8
Ta = 25℃
MAX. UNITS
10
μA
±1
μA
1.4
V
0.014
Ω
0.019
Ω
-
S
1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=10V, Vgs=0V
f=1MHz
MIN.
-
-
-
TYP.
1650
1000
450
Ta = 25℃
MAX. UNITS
-
pF
-
pF
-
pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs=5V, Id=5A
Vdd=10V
MIN.
-
-
-
-
TYP.
15
25
65
15
Ta = 25℃
MAX. UNITS
-
ns
-
ns
-
ns
-
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Aambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN.
-
TYP. MAX. UNITS
50
-
℃/W
2/5