XP131A0232SR Datasheet, PDF (2/4 Pages) Torex Semiconductor – N-Channel Power MOS FET

91"43
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DC Characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state
Resistance (note)
Forward Transfer Admittance
(note)
Body Drain Diode
Forward Voltage
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
Yfs
Vf
CONDITIONS
Vds=20V, Vgs=0V
Vgs=±8V, Vds=0V
Id=1mA, Vds=10V
Id=4A, Vgs=4.5V
Id=4A, Vgs=2.5V
Id=4A, Vgs=1.5V
Id=4A, Vds=10V
If=8A, Vgs=0V
Note: Effective during pulse test.
Ta=25°C
MIN
TYP
MAX
UNITS
10
µA
±10
µA
0.5
V
0.025
0.032
Ω
0.035
0.045
Ω
0.055
0.08
Ω
18
S
0.85
1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=10V, Vgs=0V
f=1MHz
Ta=25°C
MIN
TYP
MAX
UNITS
1200
pF
550
pF
180
pF
Switching Characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs=5V, Id=4A
Vdd=10V
Ta=25°C
MIN
TYP
MAX
UNITS
15
ns
15
ns
80
ns
10
ns
11 Thermal Characteristics
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Thermal Resistance
Implement on a glass epoxy
(channel-ambience)
Rth (ch-a)
resin PCB
50
˚C/W
720