XBS306P11R-G Datasheet, PDF (2/5 Pages) Torex Semiconductor – Schottky Barrier Diode, 3A, 60V Type

XBS306P11R-G
■TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage
(2) Reverse Current vs. Reverse Voltage
10
100
Ta=125℃
1
75℃
25℃
0.1
0.01
-25℃
10
1
0.1
0.01
Ta=125℃
100℃
75℃
25℃
0.001
0
0.2
0.4
0.6
0.8
Forward Voltage: VF (V)
0.001
0
20
40
60
Reverse Voltage: V_R (V)
(3) Terminal Capacitance vs. Reverse Voltage
1000
800
600
400
200
0
0
10
20
30
40
Reverse Voltage: V_R (V)
(4) Average Forward Current vs. Operating Temperature
5
4
3
2
1
0
0
50
100
150
Operating Temperature: Ta (℃)
■NOTES ON USE
1. Please use this IC within the absolute maximum ratings.
Even within the ratings, in case of high load use continuously such as high temperature, high voltage, high current and thermal stress may
cause reliability degradation of the IC.
2. Torex places an importance on improving our products and their reliability.
We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems.
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